• Part: IXFH18N60P
  • Description: PolarHV HiPerFET Power MOSFET
  • Category: MOSFET
  • Manufacturer: IXYS
  • Size: 192.76 KB
Download IXFH18N60P Datasheet PDF
IXYS
IXFH18N60P
Features l l l n A μA μA mΩ International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % Easy to mount Space savings High power density DS99390E(03/06) © 2006 IXYS All rights reserved IXFH 18N60P IXFV 18N60P IXFV 18N60PS .. Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. 9 16 2500 VGS = 0 V, VDS = 25 V, f = 1 MHz 280 23 21 VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 RG = 5 Ω (External) 22 62 22 50 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 15 18 0.35 (TO-247, PLUS220) 0.21 S p F p F p F ns ns ns ns Dim. Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain 1 2 3 TO-247 (IXFH) Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd Rth JC Rth CS VDS = 20 V; ID = 0.5 ID25, Note 1 n C n C n C °C/W °C/W Source-Drain Diode Symbol IS ISM VSD trr QRM FRM Test Conditions VGS = 0 V...