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IXFH18N60P - PolarHV HiPerFET Power MOSFET

Download the IXFH18N60P datasheet PDF. This datasheet also covers the IXFV18N60P variant, as both devices belong to the same polarhv hiperfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (IXFV18N60P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Overview

www.DataSheet4U.com PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated IXFH 18N60P IXFV 18N60P IXFV 18N60PS VDSS ID25 RDS(on) trr = = ≤ ≤ 600 V 18 A 400.

Key Features

  • l l l nA μA μA mΩ International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % Easy to mount Space savings High power density DS99390E(03/06) © 2006 IXYS All rights reserved IXFH 18N60P IXFV 18N60P IXFV 18N60PS www. DataSheet4U. com Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. 9 16 2500.