IXFH20N100P Datasheet Polar Power MOSFET HiPerFET

Manufacturer: IXYS (now Littelfuse)

IXFH20N100P polar power mosfet hiperfet by IXYS (now Littelfuse) - Datasheet Preview

Datasheet Details

Part number	IXFH20N100P
Manufacturer	IXYS (now Littelfuse)
File Size	134.72 KB
Description	Polar Power MOSFET HiPerFET
Datasheet	IXFH20N100P Datasheet

Overview

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C IXFH20N100P IXFT20N100P VDSS ID25 RDS(on) trr = = ≤ ≤ 1000V 20A 570mΩ 300ns Maximum Ratings 1000 1000 ± 30 ± 40 20 50 10 800 15 660 -55 ...

+150 150 -55 ...

+150 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.in.

Key Features

z z z z International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125°C Characteristic Values Min. Typ. Max. 1000 3.5 6.5 ± 200 V V nA z Easy to mount Space savings High power density.

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