IXFH21N50 Overview
HiPerFETTM Power MOSFETs IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family OBSOLETE: +150 °C 1.6 mm (0.062 in.) from case for 10 s 300 °C Mounting torque 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g TO-268 (D3) Case Style (TAB) G S TO-204 AE (IXFM) OBSOLETE PACKAGE TYPE G D G = Gate, S = Source, D = Drain, TAB = Drain (TAB).
IXFH21N50 Key Features
- International standard packages
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS)
- Low package inductance
- easy to drive and to protect
- Fast intrinsic Rectifier
- VDSS VGS = 0 V
