IXFH21N50F Overview
Advance Technical Information HiPerRFTM Power MOSFETs F-Class: +150 300 V V V V A A A mJ J V/ns W °C °C °C °C G = Gate, S = Source, TO-268 (IXFT) Case Style G S D = Drain, TAB = Drain (TAB) 1.13/10 Nm/lb.in.
IXFH21N50F Key Features
- easy to drive and to protect l Fast intrinsic rectifier
