Datasheet Summary
TrenchT2TM HiperFETTM Power MOSFET
IXFH320N10T2 IXFT320N10T2
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
VDSS = ID25 =
RDS(on) ≤
100V 320A 3.5mΩ
TO-247 (IXFH)
Symbol
VDSS VDGR
VGSS VGSM
ID25 ILRMS IDM
IA EAS dv/dt
TJ TJM Tstg TL Tsold
Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C
1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-247 TO-268
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V,...
