IXFH6N100F Description
+150 300 V V V V A A A mJ mJ V/ns W °C °C °C °C G = Gate, S = Source, TO-268 (IXFT) Case Style G S D = Drain, TAB = Drain (TAB) 1.13/10 Nm/lb.in.
IXFH6N100F Key Features
- RF capable MOSFETs
- Double metal process for low gate resistance
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Low package inductance
- easy to drive and to protect
- Fast intrinsic rectifier