Overview: TrenchTM HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFH86N30T IXFT86N30T VDSS = 300V ID25 = 86A RDS(on) 46m
TO-247 (IXFH) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD
dV/dt
TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C
TC = 25C IS IDM, VDD VDSS, TJ 150°C
1.6mm (0.063in) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247) TO-247 TO-268 Maximum Ratings 300 V 300 V 20 V 30 V 86 A 190 A 43 A 1.5 J 860 W 20 V/ns -55 to +150 C +150 C -55 to +150 C 300 C 260 C 1.13/10 Nm/lb.in. 6.0 g 4.0 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 4mA IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 • ID25 , Note 1 Characteristic Values Min. Typ. Max. 300 V 3.0 5.
