Overview: TM www.DataSheet4U.com HiPerFET PolarHV Power MOSFET IXFK 48N60P IXFX 48N60P VDSS ID2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode RDS(on) trr = = ≤ ≤ 600 V 48 A 135mΩ 200 ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight TL TSOLD Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C Maximum Ratings 600 600 ±30 ±40 48 110 48 70 2.0 20 830 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns TO-264 (IXFK) G D S (TAB) PLUS247 (IXFX) (TAB) W °C °C °C G = Gate S = Source D = Drain Tab = Drain Mounting torque (TO-264) TO-264 PLUS247 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s 1.13/10 Nm/lb.in.
