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IXFK48N60P - Power MOSFET

Key Features

  • l l l Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 8 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125° C Characteristic Values Min. Typ. Max. 600 3.0 5.0 ±200 25 1000 135 V V nA µA µA mΩ l International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l Easy to mount Space savings High power dens.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TM www.DataSheet4U.com HiPerFET PolarHV Power MOSFET IXFK 48N60P IXFX 48N60P VDSS ID2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode RDS(on) trr = = ≤ ≤ 600 V 48 A 135mΩ 200 ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight TL TSOLD Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C Maximum Ratings 600 600 ±30 ±40 48 110 48 70 2.0 20 830 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns TO-264 (IXFK) G D S (TAB) PLUS247 (IXFX) (TAB) W °C °C °C G = Gate S = Source D = Drain Tab = Drain Mounting torque (TO-264) TO-264 PLUS247 1.