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IXFL44N100P - Polar Power MOSFET HiPerFET

Datasheet Summary

Features

  • G = Gate S = Source D = Drain G S D.
  • Silicon chip on Direct-Copper-Bond.
  • substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(.

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Datasheet Details

Part number IXFL44N100P
Manufacturer IXYS Corporation
File Size 124.41 KB
Description Polar Power MOSFET HiPerFET
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PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL www.DataSheet4U.net IXFL44N100P VDSS ID25 RDS(on) trr = = ≤ ≤ 1000V 22A 240mΩ 300ns ISOPLUS i5-PakTM (HV) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 1000 1000 ± 30 ± 40 22 110 22 2 15 357 -55 ... +150 150 -55 ... +150 Maximum lead temperature for soldering Plastic body for 10s 50/60 Hz, RMS, 1 minute IISOL ≤ 1mA Mounting force t = 1s 300 260 2500 3000 40..120/4.5..27 8 V V V V A A A J V/ns W °C °C °C °C °C V~ V~ N/lb.
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