IXFL44N100P
Overview
- Silicon chip on Direct-Copper-Bond * * *
- substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<30pF) Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Fast intrinsic Rectifier FC Weight
- Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS VGS = 0V VGS = 10V, ID = 22A, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 1000 3.5 6.5 ± 200 V V nA * * *
- Switched-mode and resonant-mode power supplies DC-DC converters Laser Drivers AC and DC motor controls Robotics and servo controls Advantages 50 μA 3 mA 240 mΩ * *
- Easy assembly Space savings High power density © 2008 IXYS CORPORATION, All rights reserved
