IXFL44N100P Description
PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL ..net IXFL44N100P VDSS ID25 RDS(on) trr = = ≤ ≤ 1000V 22A 240mΩ 300ns ISOPLUS.
IXFL44N100P Key Features
- Silicon chip on Direct-Copper-Bond
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation Low drain to tab capacitance(<30pF) Rugged polysilicon gate cell structure Unclamped Inductiv
- Easy assembly Space savings High power density
- VDSS, ID = 22A RG = 1Ω (External)