Overview: PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN 100N50P VDSS ID25 RDS(on) trr = = ≤ ≤ 500 V 90 A 49 mΩ 200 ns Symbol VDSS VDGR VGSS VGSM ID25 IDRMS IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 2 Ω TC = 25° C Maximum Ratings 500 500 ±30 ±40 90 75 250 100 100 5 20 1040 -55 ... +150 150 -55 ... +150 V V V V A A A A mJ J V/ns W °C °C °C °C V~ V~ miniBLOC, SOT-227 B (IXFN) E153432
S G S D G = Gate S = Source D = Drain Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal.
