• Part: IXFN102N30P
  • Description: Polar MOSFETs
  • Category: MOSFET
  • Manufacturer: IXYS
  • Size: 140.00 KB
Download IXFN102N30P Datasheet PDF
IXYS
IXFN102N30P
Features z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 m A VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 300 2.5 5.0 ±200 25 250 33 V V n A µA µA mΩ z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Easy to mount Space savings High power density © 2005 IXYS All rights reserved DS99221A(02/05) IXFK 102N30P IXFN 102N30P TO-264 AA Outline Symbol Test Conditions .. Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 45 57 7500 VGS = 0 V, VDS = 25 V, f = 1 MHz 1150 230 30 VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A RG = 3.3 Ω (External) 28 130 30 224 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 50 110 S p F p F p F ns ns ns ns n C n C n C 0.18 K/W TO-264 SOT-227B 0.15 0.05...