IXFN102N30P - Polar MOSFETs

This page provides the datasheet information for the IXFN102N30P, a member of the IXFK102N30P Polar MOSFETs family.

Product Overview

IXYS Corporation

Part number	IXFN102N30P
Manufacturer	IXYS Corporation
File Size	140.00 KB
Description	Polar MOSFETs
Datasheet	IXFN102N30P Datasheet
Additional preview pages of the IXFN102N30P datasheet.

z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 300 2.5 5.0 ±200 25 250 33 V V nA µA µA mΩ z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %.

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Published: Jan 23, 2009 |