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IXFN102N30P Datasheet Polar MOSFETs

Manufacturer: IXYS (now Littelfuse)

Download the IXFN102N30P datasheet PDF. This datasheet also includes the IXFK102N30P variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IXFK102N30P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Overview

Advanced Technical Information www.DataSheet4U.com PolarHTTM HiPerFET IXFK 102N30P IXFN 102N30P Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode VDSS ID25 RDS(on) trr = = = ≤ 300 V 102 A 33 mΩ 200 ns Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 300 300 ± 20 ± 30 102 75 250 60 60 2.5 10 700 -55 ...

+150 150 -55 ...

+150 V V V V A A A A mJ J V/ns W °C °C °C °C TO-264(SP) (IXFK) G D (TAB) S D = Drain TAB = Drain G = Gate S = Source miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-264 SOT-227B 300 1.13/10 Nm/lb.in.

Key Features

  • z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 300 2.5 5.0 ±200 25 250 33 V V nA µA µA mΩ z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %.

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