Overview: Advance Technical Information GigaMOSTM HiperFETTM Power MOSFET IXFN140N25T VDSS ID25 = = RDS(on) ≤ ≤ trr
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
miniBLOC E153432
S 250V 120A 17mΩ 200ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg VISOL TL TSOLD Md
..net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C Maximum Ratings 250 250 ±20 ±30 120 400 40 3 690 20 -55 ... +150 150 -55 ... +150 V V V V A A A J W V/ns °C °C °C V~ V~ °C °C Nm/lb.in. Nm/lb.in. g G S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal.
