Datasheet4U Logo Datasheet4U.com

IXFN160N30T - GigaMOS Power MOSFET

Features

  • z z 1.6mm (0.062 in. ) from Case for 10s Plastic Body for 10s 50/60 Hz, RMS IISOL ≤ 1mA www. DataSheet4U. net 300 260 2500 3000 1.5/13 1.3/11.5 30 t = 1 minute t = 1 second Mounting Torque Terminal Connection Torque International Standard Package miniBLOC, with Aluminium Nitride Isolation z Isolation voltage 2500 V~ z High Current Handling Capability z Fast Intrinsic Diode z Avalanche Rated z Low RDS(on) Advantages z z Weight Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVD.

📥 Download Datasheet

Datasheet preview – IXFN160N30T

📁 Similar Datasheet

Other Datasheets by IXYS Corporation

Full PDF Text Transcription

Click to expand full text
Advance Technical Information GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN160N30T RDS(on) ≤ ≤ trr VDSS ID25 = = 300V 130A 19mΩ 200ns miniBLOC, SOT-227 E153432 S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 300 300 ±20 ±30 130 440 40 3 20 900 -55 ... +150 150 -55 ... +150 V V V V A A A J V/ns W °C °C °C °C °C V~ V~ Nm/lb.in. Nm/lb.in. g G S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source ( Gate Return ) Terminal.
Published: |