IXFN24N100F Datasheet PDF (HiPerRF Power MOSFETs) | Download IXYS Corporation IXFN24N100F

IXFN24N100F - HiPerRF Power MOSFETs

Features

l l 1.6 mm (0.63 in) from case for 10 s 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s 2500 3000 l l Mounting torque Terminal connection torque 1.5/13 Nm/lb. in. 1.5/13 Nm/lb. in. 30 g l RF capable MOSFETs Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic rectifier.

Datasheet Details

Part number	IXFN24N100F
Manufacturer	IXYS
File Size	136.40 KB
Description	HiPerRF Power MOSFETs
Datasheet	IXFN24N100F Datasheet
Additional preview pages of the IXFN24N100F datasheet.

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Full PDF Text Transcription

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Advance Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching IXFN 24N100F VDSS ID25 RDS(on) = = = 1000 24 0.39 V A Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr D trr ≤ 250 ns G S S Symbol www.DataSheet4U.com V DSS Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 1000 1000 ±20 ±30 24 96 24 60 3.0 10 600 -55 ... +150 150 -55 ...

Published: Jun 20, 2008 |