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IXFN25N80 - (IXFx2xN80) HiPerFET Power MOSFETs

This page provides the datasheet information for the IXFN25N80, a member of the IXFK25N80 (IXFx2xN80) HiPerFET Power MOSFETs family.

Features

  • G D S (TAB) miniBLOC, SOT-227 B (IXFN) E153432 D G S G S S S D G = Gate S = Source D = Drain TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source -55 +150 Mounting torque Terminal connection torque 1.5/13 Nm/lb. in. 1.5/13 Nm/lb. in. 30 g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 0.096 2 -0.214 ±200 TJ = 25°C TJ = 125°C 25N80 27N80 500 2 0.35 0.30 4.5 V %/K.

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Datasheet Details

Part number IXFN25N80
Manufacturer IXYS
File Size 296.83 KB
Description (IXFx2xN80) HiPerFET Power MOSFETs
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Full PDF Text Transcription

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www.DataSheet4U.com Not for New Designs VDSS ID25 27 A 25 A 27 A 25 A RDS(on) 0.30 0.35 0.30 0.35 Ω Ω Ω Ω HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFK IXFK IXFN IXFN 27N80 25N80 27N80 25N80 800 800 800 800 V V V V TO-264 AA (IXFK) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Md Weight Symbol Test Conditions 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s 300 0.
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