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IXFN26N100P Datasheet Polar Power MOSFET HiPerFET

Manufacturer: IXYS (now Littelfuse)

Overview

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL VISOL Md www.DataSheet4U.net IXFN26N100P VDSS ID25 RDS(on) trr = 1000V = 23A ≤ 390mΩ ≤ 300ns Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 1000 1000 ± 30 ± 40 23 65 13 1.0 20 595 -55 ...

+150 150 -55 ...

+150 V V V V A A A J V/ns W °C °C °C °C V~ V~ Nm/lb.in.

Key Features

  • z z 1.6mm (0.062 in. ) from case for 10s 50/60 Hz, RMS IISOL ≤ 1mA Mounting torque Terminal connection torque t = 1min t = 1s 300 2500 3000 1.5/13 1.3/11.5 30 z z z z International standard package Encapsulating epoxy meets UL 94 V-0, flammability classification miniBLOC with Aluminium nitride isolation Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Weight Advantages z Symbol Test Conditions (TJ = 25°C, unless otherwise.