Overview: Advance Technical Information GigaMOSTM Trench HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN420N10T RDS(on) ≤ ≤ trr VDSS ID25 = = 100V 420A 2.3mΩ 140ns miniBLOC, SOT-227 E153432
S Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL Md
..net Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C Maximum Ratings 100 100 ±20 ±30 420 200 1000 100 5 20 1070 -55 ... +175 175 -55 ... +175 V V V V A A A A J V/ns W °C °C °C °C °C V~ V~ Nm/lb.in. Nm/lb.in. g G S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source ( Gate Return ) Terminal.
