Click to expand full text
HiPerFETTM Power MOSFETs Q-Class
VDSS IXFN 44N50Q IXFN 48N50Q
ID25
RDS(on)
500 V 44 A 120 mW 500 V 48 A 100 mW
trr £ 250 ns
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Symbol
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C 44N50 48N50 44N50 48N50
Maximum Ratings 500 500 ±20 ±30 44 48 176 192 48 60 2.5 5 500 -55 to +150 150 -55 to +150 V V V V A A A A A mJ mJ V/ns W °C °C °C V~ V~ Nm/lb.in. Nm/lb.in.
IXFN44N50Q Datasheet
