IXFN44N80 Description
+150 2500 3000 1.5/13 1.3/11.5 30 W °C °C °C V~ V~ Nm/lb.in. g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min.
IXFN44N80 Key Features
- International standard packages -miniBLOC, with Aluminium nitride
- Low RDS (on) HDMOSTM process -Rugged polysilicon gate cell
- Unclamped Inductive Switching
- Low package inductance -Fast intrinsic Rectifier