Overview: Power MOSFET HiPerFETTM Single MOSFET Die
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFN44N80 Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dV/dt
PD TJ TJM Tstg VISOL
Md
Weight Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ
Continuous Transient
TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C
TC = 25°C TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 1Ω
TC = 25°C 50/60 Hz, RMS t = 1min IISOL ≤ 1mA t = 1s Mounting torque Terminal connection torque Maximum Ratings 800 V 800 V ±20 V ±30 V 44 A 176 A 44 A 64 mJ 4 J 5 V/ns 700
-55 ... +150 150
-55 ... +150
2500 3000
1.5/13 1.3/11.5
30 W
°C °C °C
V~ V~
Nm/lb.in. Nm/lb.in.
g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS(th) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA 800 V 2.5 4.5 V IGSS VGS = ±20V, VDS = 0V ±200 nA IDSS VDS = VDSS VGS = 0V TJ = 125°C 100 μA 2 mA RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 0.165 Ω VDSS ID25 RDS(on) = 800V = 44A ≤ 0.
