Overview: PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN 44N80P VDSS ID25
RDS(on) trr = 800 V = 39 A ≤ 190 mΩ ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C Maximum Ratings 800 800 ± 30 ± 40 39 100 22 80 3.4 10 694 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C V~ V~ miniBLOC, SOT-227 B (IXFN) E153432
S G S G = Gate S = Source D D = Drain Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS, 1 minute IISOL < 1 mA, 10 seconds Mounting torque Terminal torque 300 2500 3000 ..net 1.13/10 Nm/lb.in. 1.13/10 Nm/lb.in.
