IXFN44N80P Description
+150 V V V V A A A mJ J V/ns W °C °C °C °C V~ V~ miniBLOC, SOT-227 B (IXFN) E153432 S G S G = Gate S = Source D D = Drain Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. 30 g Weight Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 800 μA VDS = VGS, ID = 8 mA VGS = ± 30 V, VDS = 0 V VDS = VDSS VGS = 0...
IXFN44N80P Key Features
- International standard package
- Encapsulating epoxy meets UL 94 V-0, flammability classification
- miniBLOC with Aluminium nitride isolation
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Low package inductance
- Fast intrinsic Rectifier