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IXFN48N50Q - Power MOSFET

Key Features

  • IXYS advanced low Qg process.
  • Low gate charge and capacitances - easier to drive - faster switching.
  • Unclamped Inductive Switching (UIS) rated.
  • Low RDS (on).
  • Fast intrinsic diode.
  • International standard package.
  • miniBLOC with Aluminium nitride isolation for low thermal resistance.
  • Low terminal inductance (.

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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXFN48N50 HiPerFET Power MOSFETs
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HiPerFETTM Power MOSFETs Q-Class VDSS IXFN 44N50Q IXFN 48N50Q ID25 RDS(on) 500 V 44 A 120 mW 500 V 48 A 100 mW trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C 44N50 48N50 44N50 48N50 Maximum Ratings 500 500 ±20 ±30 44 48 176 192 48 60 2.5 5 500 -55 to +150 150 -55 to +150 V V V V A A A A A mJ mJ V/ns W °C °C °C V~ V~ Nm/lb.in. Nm/lb.in.