IXFN48N50Q Overview
HiPerFETTM Power MOSFETs Q-Class VDSS IXFN 44N50Q IXFN 48N50Q ID25 RDS(on) 500 V 44 A 120 mW 500 V 48 A 100 mW trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg.
IXFN48N50Q Key Features
- IXYS advanced low Qg process
- Low gate charge and capacitances
- easier to drive
- faster switching
- Unclamped Inductive Switching (UIS) rated
- Low RDS (on)
- Fast intrinsic diode
- International standard package
- miniBLOC with Aluminium nitride isolation for low thermal resistance
- Low terminal inductance (<10 nH) and stray capacitance to heatsink (<35pf)
