IXFN55N50 Overview
30 g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1mA VDS = VGS, ID = 8mA VGS = ±20V; VDS = 0V VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Note 1 Characteristic Values Min.
IXFN55N50 Key Features
- International standard packages
- Encapsulating epoxy meets UL 94 V-0, flammability classification
- miniBLOC with Aluminium nitride isolation
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Low package inductance
- Fast intrinsic Rectifier