• Part: IXFN60N60
  • Description: HiPerFET Power MOSFET
  • Category: MOSFET
  • Manufacturer: IXYS
  • Size: 71.37 KB
Download IXFN60N60 Datasheet PDF
IXYS
IXFN60N60
Features - International standard packages - mini BLOC, with Aluminium nitride isolation - Low RDS (on) HDMOSTM process - Rugged polysilicon gate cell structure - Unclamped Inductive Switching (UIS) rated Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g - Low package inductance - Fast intrinsic Rectifier Applications - DC-DC converters Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2 4.5 ±200 TJ = 25°C TJ = 125°C 100 2 75 V V n A m A m A m W - - - - Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls VDSS VGH(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 m A VDS = VGS, ID = 8 m A VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 - ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 % Advantages - Easy to mount - - Space savings High power density IXYS reserves the right to change limits, test conditions, and dimensions. 98593B...