• Part: IXFN64N50P
  • Description: HiPerFET Power MOSFET
  • Category: MOSFET
  • Manufacturer: IXYS
  • Size: 58.21 KB
Download IXFN64N50P Datasheet PDF
IXYS
IXFN64N50P
Features International standard packages Fast recovery diode z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z z z mini BLOC, SOT-227 B (IXFN) E153432 S D G = Gate S = Source D = Drain Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. Mounting torque 50/60 Hz t = 1 min IISOL ≤ 1 m A t=1s Mounting torque Terminal connection torque (M4) SOT-227B 1.13/10 Nm/lb.in. 2500 V~ 3000 V~ 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Characteristic Values Min. Typ. Max. 500 2.5 5.0 ±100 TJ = 125°C 25 250 85 V V n A µA µA mΩ Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 8 m A VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V z z Easy to mount Space savings High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2005 IXYS All rights reserved DS99349(02/05) IXFN64N50...