Overview: Trench Gate Power MOSFET HiperFETTM
N-Channel Enhancement Mode Avalanche Rated IXFA102N15T IXFH102N15T IXFP102N15T VDSS ID25 RDS(on) trr = 150V = 102A ≤ 18mΩ ≤ 120ns TO-263 (IXFA) G S (TAB) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC
..net Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C RGS = 1MΩ Continuous Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS , TJ ≤ 175°C TC = 25°C Maximum Ratings 150 150 ± 20 ± 30 102 75 300 51 750 20 455 -55 ... +175 175 -55 ... +175 V V V V A A A A mJ V/ns W °C °C °C °C °C Nmlb.in. N/lb. g g g TO-220 (IXFP) G D S (TAB) TO-247 (IXFH) G D (TAB) S D = Drain TAB = Drain G = Gate S = Source 1.6mm (0.062 in.
