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IXFP110N15T2 - Power MOSFET

Key Features

  • International standard packages.
  • 175°C Operating Temperature.
  • High current handling capability.
  • Fast intrinsic Rectifier.
  • Dynamic dV/dt rated.
  • Low RDS(on) Advantages.
  • Easy to mount.
  • Space savings.
  • High power density.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Technical Information TrenchT2TM HiperFET Power MOSFET IXFA110N15T2 IXFP110N15T2 VDSS = ID25 = RDS(on)  150V 110A 13m N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings 150 V 150 V  20 V  30 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS,TJ  175C TC = 25C 110 300 50 800 15 480 -55 ... +175 175 -55 ... +175 A A A mJ V/ns W  C  C  C Maximum Lead Temperature for Soldering 300 1.6 mm (0.062in.) from Case for 10s 260 Mounting Force (TO-263) Mounting Torque (TO-220) 10..65 / 2.2..14.6 1.13 / 10 °C °C N/lb Nm/lb.