IXFP130N10T - Power MOSFET

Datasheet Summary

Features

Ultra-Low On Resistance.
Avalanche Rated.
Low Package Inductance - Easy to Drive and to Protect.
175C Operating Temperature.
Fast Intrinsic Diode Advantages.
Easy to Mount.
Space Savings.
High Power Density.

IXYS Corporation

📥 Download Datasheet

Datasheet Details

Part number	IXFP130N10T
Manufacturer	IXYS Corporation
File Size	283.89 KB
Description	Power MOSFET
Datasheet	IXFP130N10T Datasheet
Additional preview pages of the IXFP130N10T datasheet.

📁 Similar Datasheet

IXFP130N10T - N-Channel MOSFET (INCHANGE)
IXFP130N10T2 - N-Channel MOSFET (INCHANGE)
IXFP130N15X3 - Power MOSFET (IXYS)
IXFP130N15X3 - N-Channel MOSFET (INCHANGE)
IXFP102N15T - N-Channel MOSFET (INCHANGE)
IXFP110N15T2 - N-Channel MOSFET (INCHANGE)
IXFP12N65X2 - N-Channel MOSFET (INCHANGE)
IXFP12N65X2 - Power MOSFET (IXYS)
IXFP12N65X2M - Power MOSFET (IXYS)
IXFP12N65X2M - N-Channel MOSFET (INCHANGE)

Other Datasheets by IXYS Corporation

IXFP130N10T2 - Power MOSFET
IXFP102N15T - Power MOSFET
IXFP10N60P - Polar MOSFET
IXFP10N80P - Power MOSFET
IXFP110N15T2 - Power MOSFET
IXFP12N50P - Polar MOSFETs
IXFP12N50PM - Power MOSFET
IXFP14N60P - Polar MOSFET

Full PDF Text Transcription

Click to expand full text

Preliminary Technical Information TrenchTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode IXFA130N10T IXFP130N10T Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings 100 V 100 V  20 V  30 V TC = 25C Lead Current Limit, RMS TC = 25C, Pulse Width Limited by TJM 130 A 120 A 350 A TC = 25C TC = 25C 65 A 750 mJ TC = 25C 360 W -55 ... +175 C 175 C -55 ... +175 C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263) Mounting Torque (TO-220) 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in TO-263 TO-220 2.5 g 3.

Published: May 13, 2011 |