Overview: TrenchT2TM HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA130N10T2 IXFP130N10T2 Symbol
VDSS VDGR
VGSS VGSM
ID25 IL(RMS) IDM
IA EAS
dV/dt
PD
TJ TJM Tstg
TL TSOLD FC Md Weight Test Conditions
TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M
Continuous Transient Maximum Ratings 100 V 100 V 20 V 30 V TC = 25C (Chip Capability) External Lead Current Limit TC = 25C, Pulse Width Limited by TJM
TC = 25C TC = 25C
IS IDM, VDD VDSS,TJ 175C
TC = 25C 130 120 300
65 800
20
360
-55 ... +175 175
-55 ... +175 A A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263) Mounting Torque (TO-220) 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in TO-263 TO-220 2.5 g 3.0 g Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250A VGS(th) VDS = VGS, ID = 1mA IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 150C RDS(on) VGS = 10V, ID = 65A, Notes 1 & 2 Characteristic Values Min. Typ. Max. 100 V 2.0 4.5 V 200 nA 10 A 500 A 10.1 m VDSS =
ID25 = RDS(on) 100V 130A 10.
