IXFP180N10T2 Description
TrenchT2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA180N10T2 IXFP180N10T2 Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 175C.
IXFP180N10T2 Key Features
- International Standard Packages
- 175°C Operating Temperature
- High Current Handling Capability
- Fast Intrinsic Rectifier
- Dynamic dV/dt Rated
- Easy to Mount
- Space Savings
- High Power Density