IXFR15N80Q
Features
D = Drain
- Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
- Low drain to tab capacitance(<50p F)
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Fast intrinsic Rectifier
Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.0 4.5 ±100 TJ = 25°C TJ = 125°C 25 1 0.60 V V n A m A m A W Advantages
- Easy assembly
- Space savings
- High power density
- DC-DC converters
- Battery chargers
- Switched-mode and resonant-mode power supplies
- DC choppers
- AC motor control
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 3 m A VDS = VGS, ID = 4m A VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 7.5A Note 2
IXYS reserves the right to change limits, test conditions, and dimensions.
98590A (7/00)
© 2000 IXYS All rights reserved
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IXFR 15N80Q
Symbol Test...
