IXFR15N80Q Description
+150 300 2500 5 V V V V A A A mJ J V/ns W °C °C °C °C V~ g G D RDS(on) = 800 V = 13 A = 0.60 W trr £ 250 ns ISOPLUS 247TM Isolated back surface G = Gate S = Source Patent pending.
IXFR15N80Q Key Features
- Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
- Low drain to tab capacitance(<50pF)
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Fast intrinsic Rectifier