IXFR180N085
Features
- Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
- Low drain to tab capacitance(<25p F)
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Fast intrinsic Rectifier Applications
- DC-DC converters
- Battery chargers
- Switched-mode and resonant-mode power supplies
- DC choppers
- AC motor control Advantages
- Easy assembly
- Space savings
- High power density
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 85 2.0 4.0 ±100 TJ = 25°C TJ = 125°C 100 2 7 V V n A m A m A m W
VDSS VGS(th) IGSS IDS RDS(on)
VGS = 0 V, ID = 3m A VDS = VGS, ID = 8m A VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Note 1
IXYS reserves the right to change limits, test conditions, and dimensions.
98638 (7/99)
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IXFR 180N085
Symbol Test...
