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IXFT80N10Q

IXFT80N10Q is HiPerFET Power MOSFETs manufactured by IXYS.
IXFT80N10Q datasheet preview

IXFT80N10Q Datasheet

Part number IXFT80N10Q
Datasheet IXFT80N10Q Datasheet PDF (Download)
File Size 73.94 KB
Manufacturer IXYS
Description HiPerFET Power MOSFETs
IXFT80N10Q page 2

IXFT80N10Q Overview

+150 V V V V A A A mJ J V/ns W °C °C °C °C TO-247 AD (IXFH) (TAB) TO-268 (IXFT) Case Style G S (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6 mm (0.062 in.) from case for 10 s Mounting torque (TO-247) TO-247 AD TO-268 300.

IXFT80N10Q Key Features

  • IXYS advanced low gate charge process
  • International standard packages
  • Low gate charge and capacitance
  • easier to drive
  • faster switching
  • Low RDS (on)
  • Unclamped Inductive Switching (UIS) rated
  • Molding epoxies meet UL 94 V-0 flammability classification
  • Easy to mount
  • Space savings

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