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IXFT80N10Q - HiPerFET Power MOSFETs

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IXYS Corporation

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IXFT80N10Q HiPerFET Power MOSFETs by IXYS Corporation - Datasheet Preview — Datasheet preview – IXFT80N10Q

Datasheet Details

Part number	IXFT80N10Q
Manufacturer	IXYS Corporation
File Size	73.94 KB
Description	HiPerFET Power MOSFETs
Datasheet	IXFT80N10Q Datasheet
Additional preview pages of the IXFT80N10Q datasheet.

Product details

Features

IXYS advanced low gate charge process.
International standard packages.
Low gate charge and capacitance - easier to drive - faster switching.
Low RDS (on).
Unclamped Inductive Switching (UIS) rated.
Molding epoxies meet UL 94 V-0 flammability classification 1.13/10 Nm/lb. in. 6 4 g g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS =.

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Published: May 23, 2011 |