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IXFV16N80PS - PolarHV Power MOSFET

Download the IXFV16N80PS datasheet PDF. This datasheet also covers the IXFH16N80P variant, as both devices belong to the same polarhv power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z Fast Recovery diode z Unclamped Inductive Switching (UIS) rated z International standard packages z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % www. DataSheet4U. net © 2006 IXYS All rights reserved DS99599E(07/06) IXFH 16N80P IXFT 16N80P IXFV 16N80P IXFV 16N80PS Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFH16N80P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXFV16N80PS (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXFV16N80PS. For precise diagrams, and layout, please refer to the original PDF.

PolarHVTM Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated IXFH 16N80P IXFT 16N80P IXFV 16N80P IXFV 16N80PS VDSS = 800 V ID25 = 16 A RDS(on) ≤ ...

View more extracted text
FT 16N80P IXFV 16N80P IXFV 16N80PS VDSS = 800 V ID25 = 16 A RDS(on) ≤ 600 mΩ ≤ 250 ns trr TO-247 (IXFH) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 150°C, RG = 5 Ω TC = 25°C Maximum Ratings 800 800 ±30 ±40 16 40 8 30 1.0 10 V V V V A A A mJ J V/ns G S G D S TO-268 (IXFT) D (TAB) PLUS220 (IXFV) PD TJ TJM Tstg TL TSOLD Md FC Weight 460 -55 ... +150 150 -55 ... +150 W °C °C °C °C °C G D S D (TAB) PLUS220SMD (IX

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