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TM www.DataSheet4U.com HiPerFET PolarHV Power MOSFET
IXFK 48N60P IXFX 48N60P
VDSS ID2
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
RDS(on) trr
= = ≤ ≤
600 V 48 A 135mΩ 200 ns
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight TL TSOLD
Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C
Maximum Ratings 600 600 ±30 ±40 48 110 48 70 2.0 20 830 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns
TO-264 (IXFK)
G D S
(TAB)
PLUS247 (IXFX)
(TAB)
W °C °C °C G = Gate S = Source D = Drain Tab = Drain
Mounting torque (TO-264) TO-264 PLUS247 1.
IXFX48N60P Datasheet
