IXGA4N100 Datasheet Power MOSFET

Manufacturer: IXYS (now Littelfuse)

Overview: www.DataSheet4U.com Advanced Technical Information IGBT IXGA 4N100 IXGP 4N100 VCES = 1000 V IC25 = 8A VCE(sat) = 2.7 V Symbol VCES VCGR VGES VGEM I C25 I C90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 120 W Clamped inductive load TC = 25°C Maximum Ratings 1000 1000 ± 20 ± 30 8 4 16 ICM = 8 @ 0.8 VCES 40 -55 ... +150 150 -55 ...

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IXGA4N100 power mosfet by IXYS (now Littelfuse) - Datasheet Preview

Datasheet Details

Part number	IXGA4N100
Manufacturer	IXYS (now Littelfuse)
File Size	133.37 KB
Description	Power MOSFET
Download	IXGA4N100 Download (PDF)

Key Features

V V V V A A A A G E C (TAB) G CE TO-220AB (IXGP) TO-263 AA (IXGA) Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s Md Weight Mounting torque with screw M3 Mounting torque with screw M3.5 TO-220 TO-263 0.45/4 Nm/lb. in. 0.55/5 Nm/lb. in. 4 2 g g International High current handling capability MOS Gate turn-on - drive simplicity.

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