IXGC16N60B2 Datasheet | IXYS

.. IXGC 16N60B2 Hi Per FASTTM IGBT IXGC 16N60B2D1 B2-Class High Speed IGBT in ISOPLUS220TM Case Electrically Isolated Back Surface Preliminary Data Sheet D1 VCES = 600 V = 28 A IC25 VCE(sat) = 2.3 V tfi(typ) = 80 ns Symbol VCES VCGR VGES VGEM IC25 IC110 ID110 ICM SSOA (RBSOA) PC TJ TJM Tstg FC VISOL Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 110°C (IXGC16N60B2D1 diode) TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 22 Ω Clamped inductive load TC = 25°C Maximum Ratings 600 600 ±20 ±30 28 13 10 100 ICM = 32 @0.8 VCES 63 -55 ... +150 150 -55 ... +150 V V V V A A A A A W °C °C °C N/lb. V °C g ISOPLUS 220TM (IXGC) E153432 Isolated back surface- G = Gate E = Emitter C = Collector Mounting Force Isolation Voltage; 50/60Hz; t = 1minute; RMS Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 11..65/2.5..15 2500 300 2 Features DCB Isolated mounting tab UL recognized (E153432) Meets TO-273 package Outline High current handling capability MOS Gate turn-on - drive simplicity Epoxy meets UL94V-0 flammability classification z z z z z z Weight Applications Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers z z z z z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 2.5 16N60B2 16N60B2D1 5.0 25 50 ±100 2.3 TJ=125°C 1.8 V μA μA n A V V VGE(th) ICES IGES VCE(sat) IC = 250 μA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = 12 A, VGE = 15 V Note 2 Advantages Easy assembly High power density Very fast switching speeds for high frequency applications z z z © 2004 IXYS All rights reserved DS99173A(11/04) .. IXGC 16N60B2 IXGC 16N60B2D1 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 8 12 780 55 65 19 S p F p F p F p F n C n C n C ns ns 150 150 260 ns ns m J ns...