Datasheet Summary
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HiPerFASTTM IGBT with Diode
IXGH 20N60BD1 IXGT 20N60BD1
VCES IC25 VCE(sat)typ tfi(typ)
= = = =
600 40 1.7 100
V A V ns
Preliminary data
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 W Clamped inductive load, L = 100 mH TC = 25°C
Maximum Ratings 600 600 ±20 ±30 40 20 80 ICM = 40 @ 0.8 VCES 150 -55 ... +150 150 . -55 ... +150 V V V V A A A A W °C °C °C °C g g
TO-268 (IXGT)
G E C (TAB)
TO-247 AD (IXGH)
E C = Collector, TAB = Collector
C (TAB)
G = Gate, E =...