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HiPerFASTTM IGBT with Diode
IXGH 30N60BD1 VCES IXGT 30N60BD1 I C25
VCE(sat)
tfi(typ)
= 600 V = 60 A = 1.8 V = 100 ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 100 mH TC = 25°C
Maximum Ratings 600 600 ±20 ±30 60 30 120 ICM = 60 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 300 1.13/10 TO-247 AD TO-268 6 4 V V V V A A A A W °C °C °C °C Nm/lb.in. g g
TO-268 (IXGT)
G E C (TAB)
TO-247 AD (IXGH)
G C E
C (TAB)
G = Gate, E = Emitter, Features
C = Collector, TAB = Collector
Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.
IXGH30N60BD1 Datasheet
