IXGH32N170
IXGH32N170 is High Voltage IGBT manufactured by IXYS.
High Voltage IGBT
Preliminary Data Sheet
IXGH 32N170 VCES IXGT 32N170 IC25 VCE(sat) tfi(typ)
= 1700 V = 75 A = 3.3 V = 250 ns
..
Symbol VCGR VGES VGEM IC25
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 5 Ω Clamped inductive load TC = 25°C
Maximum Ratings 1700 1700 ± 20 ± 30 75 32 200 ICM = 90 @ 0.8 VCES 350 -55 ... +150 150 -55 ... +150 300 260 V V V V A A A A
TO-268 (IXGT)
VCES
G E C (TAB)
IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
TO-247 AD (IXGH)
C (TAB) C E C = Collector, TAB = Collector
W °C °C °C °C °C z z
G = Gate, E = Emitter,
Features z
Maximum...
