IXGH32N170 Description
High Voltage IGBT Preliminary Data Sheet IXGH 32N170 VCES IXGT 32N170 IC25 VCE(sat) tfi(typ) = 1700 V = 75 A = 3.3 V = 250 ns .. Symbol VCGR VGES VGEM IC25 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; +150 300 260 V V V V A A A A TO-268 (IXGT) VCES G E C (TAB) IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TO-247 AD (IXGH) G C (TAB) C E C = Collector, TAB = Collector W °C °C °C °C °C z z G = Gate, E = Emitter,.
IXGH32N170 Key Features
- drive simplicity Rugged NPT structure Molding epoxies meet UL 94 V-0 flammability classification