z z z z z z
G
C
E
( TAB )
G = Gate E = Emitter
C
= Collector
TAB = Collector
Optimized for Low Switching Losses Square RBSOA Anti-Parallel Ultra Fast Diode Fast Switching Avalanche Rated International Standard Package
Advantages
z z
High Power Density Low Gate Drive Requirement.
Full PDF Text Transcription for IXGH48N60C3D1 (Reference)
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IXGH48N60C3D1. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet.co.kr GenX3TM 600V IGBT with Diode High speed PT IGBT for 40-100kHz Switching IXGH48N60C3D1 VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 48A 2.5V 38ns TO-247 S...
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0C3D1 VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 48A 2.5V 38ns TO-247 Symbol VCES VCGR VGES VGEM IC25 IC110 ID110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC Weight 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 Seconds Mounting Torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Limited by Leads) TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 125°C, RG = 3Ω Clamped Inductive Load TC = 25°C Maximum Ratings 600 600 ±20 ±30 75 48 30 250 30 300 ICM = 100 @VCE < 600 300 -55 ... +150 150 -55 ... +150 300 260 1.13/10 6 V V V V A A A A A
IXGH48N60C3D1 Datasheet
