IXGH50N60B Description
Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; 600 2.5 TJ = 25°C TJ = 125°C 5.0 200 1 ±100 2.3 V V µA mA nA.
IXGH50N60B Key Features
- International standard packages
- High frequency IGBT
- Latest generation HDMOSTM process
- High current handling capability
- MOS Gate turn-on
- drive simplicity