IXGH60N60C2 Description
+150 300 V V V V A A A A W °C °C °C °C TO-247 AD (IXGH) C (TAB) G C E TO-268 (IXGT) G E C (TAB) G = Gate, E = Emitter, C = Collector, TAB = Collector.
IXGH60N60C2 Key Features
- drive simplicity
- Part: IXGH60N60C2
- Manufacturer: IXYS
- Size: 609.77 KB
Related IXYS Datasheets
| Part Number | Description |
|---|---|
| IXGH60N60C3 | High Speed PT IGBT |
| IXGH60N60 | Ultra-Low VCE(sat) IGBT |
| IXGH60N60B2 | IGBT |
| IXGH60N50 | HIGH CURRENT MOS IGBT |
| IXGH6N170A | High Voltage IGBT |