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IXGM25N100 - High speed IGBT

Download the IXGM25N100 datasheet PDF. This datasheet also covers the IXGH25N100 variant, as both devices belong to the same high speed igbt family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • International standard packages 2nd generation.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGH25N100_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXGM25N100 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXGM25N100. For precise diagrams, and layout, please refer to the original PDF.

VCES Low VCE(sat) High speed IGBT IXGH/IXGM 25 N100 1000 V IXGH/IXGM 25 N100A 1000 V I C25 50 A 50 A VCE(sat) 3.5 V 4.0 V Symbol www.DataSheet4U.com Test Conditions TJ = ...

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VCE(sat) 3.5 V 4.0 V Symbol www.DataSheet4U.com Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient T C = 25°C T C = 90°C T C = 25°C, 1 ms V GE = 15 V, TVJ = 125° C, RG = 33 Ω Clamped inductive load, L = 100 µH T C = 25°C Maximum Ratings 1000 1000 ±20 ±30 50 25 100 ICM = 50 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C TO-247 AD (IXGH) V CES V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Md Weight G C E TO-204 AE (IXGM) C G = Gate, E = Emitter, C = Collector, TAB = Collector Mounting torque (M3) 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 °

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