IXGP10N60A Description
+150 300 V V V V A A A A W °C °C °C.
IXGP10N60A Key Features
- for low on-state conduction losses l High current handling capability l MOS Gate turn-on
- drive simplicity
IXGP10N60A is High speed IGBT manufactured by IXYS.
| Part Number | Description |
|---|---|
| IXGP10N60 | High speed IGBT |
| IXGP12N100 | IGBT |
| IXGP12N100A | IGBT |
| IXGP12N100AU1 | IGBT |
| IXGP12N100U1 | IGBT |
+150 300 V V V V A A A A W °C °C °C.