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IXGP16N60C2 - High-Speed IGBT

Download the IXGP16N60C2 datasheet PDF. This datasheet also covers the IXGA16N60C2 variant, as both devices belong to the same high-speed igbt family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z z C E C (TAB) G = Gate E = Emitter C = Collector TAB = Collector Mounting torque (M3.5 screw) 0.55/5 Nm/lb. in. 300 260 4 2 °C °C g g Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s Maximum tab temperature soldering SMD devices for 10s Weight TO-220 TO-263 z Very high frequency IGBT High current handling capability MOS Gate turn-on - drive simplicity.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGA16N60C2_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXGP16N60B2 HiPerFAST IGBT
IXGP16N60B2D1 HiPerFAST IGBTs
IXGP10N60 High speed IGBT
IXGP10N60A High speed IGBT
IXGP12N100 IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Advance Technical Information HiPerFASTTM IGBT C2-Class High Speed IGBT IXGA IXGP IXGA IXGP 16N60C2 16N60C2 16N60C2D1 16N60C2D1 VCES IC25 VCE(sat) tfi(typ) = 600 V = 40 A = 3.0 V = 35 ns D1 Symbol VCES VCGR VGES VGEM IC25 IC110 ID110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 110°C (IXG_16N60C2D1 diode) TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 22 Ω Clamped inductive load TC = 25°C Maximum Ratings 600 600 ± 20 ± 30 40 16 11 100 ICM = 32 @0.8 VCES 150 -55 ... +150 150 -55 ... +150 V V V V A A A A A G G C TO-263 (IXGA) C (TAB) TO-220 (IXGP) W °C °C °C Features z z C E C (TAB) G = Gate E = Emitter C = Collector TAB = Collector Mounting torque (M3.