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IXGQ20N120B - High Voltage IGBT

Key Features

  • z z C = Collector TAB = Collector Mounting torque 1.13/10 Nm/lb. in. 300 6 z Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s www. DataSheet4U. com z Weight International standard package IGBT and anti-parallel FRED for resonant power supplies - Induction heating - Rice cookers MOS Gate turn-on - drive simplicity Fast Recovery Expitaxial Diode (FRED) - soft recovery with low IRM Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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High Voltage IGBT with Diode IXGQ 20N120B IXGQ 20N120BD1 VCES IC25 VCE(sat) tfi(typ) = 1200 = 40 = 3.4 = 160 V A V ns BD1 Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 10 Ω Clamped inductive load TC = 25°C Maximum Ratings 1200 1200 ± 20 ± 30 40 20 100 ICM = 40 @0.8 VCES 190 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C °C g TO-3P (IXGQ) G C E (TAB) G = Gate E = Emitter Features z z C = Collector TAB = Collector Mounting torque 1.13/10 Nm/lb.in. 300 6 z Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s www.DataSheet4U.