IXGT24N60CD1 Overview
HiPerFASTTM IGBT with Diode Lightspeed Series Preliminary data IXGH 24N60CD1 VCES = 600 V = 48 A IXGT 24N60CD1 IC25 VCE(sat) = 2.5 V .. Symbol VCES VCGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; 6 4 g g Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
IXGT24N60CD1 Key Features
- International standard packages JEDEC TO-247 and surface mountable TO-268
- High frequency IGBT
- High current handling capability
- Latest generation HDMOSTM process
- MOS Gate turn-on
- drive simplicity
- Fast recovery expitaxial Diode (FRED)
- soft recovery with low IRM