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IXGT28N120B - High Voltage IGBT

This page provides the datasheet information for the IXGT28N120B, a member of the IXGH28N120B High Voltage IGBT family.

Datasheet Summary

Features

  • High Voltage IGBT for resonant power supplies - Induction heating - Rice cookers International standard packages JEDEC TO-268 and JEDEC TO-247 AD Low switching losses, low V(sat) MOS Gate turn-on - drive simplicity Advantages BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250 µA , VGE = 0 V = 250 µA, VCE = VGE VCE = VCES, VGE= 0 V VCE = 0 V, VGE = ±20 V IC = 28A, VGE = 15 V High power density Suitable for surface mounting Easy to mount with 1 screw, (isolated mounting screw hole) © 2004 IXYS All.

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Datasheet Details

Part number IXGT28N120B
Manufacturer IXYS Corporation
File Size 601.25 KB
Description High Voltage IGBT
Datasheet download datasheet IXGT28N120B Datasheet
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www.DataSheet4U.com High Voltage IGBT IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE(sat) = 3.5 V tfi(typ) = 160 ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 5 Ω Clamped inductive load TC = 25°C Maximum Ratings 1200 1200 ± 20 ± 30 50 28 150 ICM = 120 @ 0.8 VCES 250 -55 ... +150 150 -55 ... +150 300 260 V V V V A A A A TO-268 (IXGT) G E C (TAB) TO-247 AD (IXGH) G C (TAB) C E W °C °C °C °C °C G = Gate, E = Emitter, C = Collector, TAB = Collector Maximum Lead temperature for soldering 1.6 mm (0.062 in.
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