Datasheet4U Logo Datasheet4U.com

IXGT32N60BD1 - HiPerFAST IGBT

Key Features

  • International standard packages.
  • Mounting torque (M3) TO-247AD 1.13/10 Nm/lb. in. 300 6 4 Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s Weight TO-247AD TO-268 High frequency IGBT and antiparallel FRED in one package High current handling capability HiPerFASTTM.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXGT32N120A3 Ultra-Low Vsat PT IGBT IXYS
IXGT32N170 High Voltage IGBT IXYS
IXGT32N170A High Voltage IGBT IXYS
IXGT32N90B2 High Speed IGBTs IXYS
IXGT32N90B2D1 IGBT IXYS

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXGT32N60C IGBT
IXGT30N120B3D1 GenX3 1200V IGBTs
IXGT30N60B HiPerFASTTM IGBT
IXGT30N60B2 HiPerFAST IGBT
IXGT30N60BD1 HiPerFASTTM IGBT with Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HiPerFASTTM IGBT with Diode IXGH 32N60BD1 IXGT 32N60BD1 VCES IC25 VCE(sat) tfi(typ) = 600 V = 60 A = 2.3 V = 85 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE= 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 100 µH TC = 25°C Maximum Ratings 600 600 ± 20 ± 30 60 32 120 ICM = 64 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C °C g g TO-268 (IXGT) G E C (TAB) TO-247 AD (IXGH) G C E C = Collector, TAB = Collector C (TAB) G = Gate, E = Emitter, Features • International standard packages • • • • Mounting torque (M3) TO-247AD 1.13/10 Nm/lb.in. 300 6 4 Maximum lead temperature for soldering 1.