IXGT35N120C Description
Advance Technical Information IGBT Lightspeed Series IXGH 35N120C IXGT 35N120C VCES = 1200 V = 70 A IC25 VCE(sat) = 4.0 V tfi(typ) = 115 ns Symbol .. V CES Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; +150 300 260 V V V V A A A A TO-268 (IXGT) G E (TAB) VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TO-247 AD (IXGH) G C (TAB) C E C = Collector, TAB = Collector W °C °C °C °C.
IXGT35N120C Key Features
- International standard packages JEDEC TO-268 surface and JEDEC TO-247 AD
- Low switching losses
- MOS Gate turn-on
- drive simplicity